| PART |
Description |
Maker |
| TC582562AXB |
CMOS NAND EPROM
|
Toshiba
|
| TC58DVM92A1FT0 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
| TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|
| TC58128FT |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58NS512ADC |
512 MBit CMOS NAND EPROM
|
Toshiba
|
| CY7C245A-45LMB CY7C245A-25TMB CY7C245A-35TMB CY7C2 |
EPROM|2KX8|CMOS|LLCC|28PIN|CERAMIC
EPROM|2KX8|CMOS|DIP|24PIN|PLASTIC
EPROM|2KX8|CMOS|FP|24PIN|CERAMIC 存储器| 2KX8 |的CMOS |计划生育| 24针|陶瓷
2K X 8 UVPROM, 10 ns, CDIP24
2K X 8 OTPROM, 10 ns, PDIP24
2K X 8 OTPROM, 12 ns, CQCC28
|
Future Designs, Inc.
CYPRESS SEMICONDUCTOR CORP
|
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| C167CR-16F SAFC167CR-16F SAF-C167CR-16F |
16-Bit CMOS Single-Chip Microcontroller with 128KByte Flash EPROM 16位CMOS单芯片微控制器，带有128K字节的Flash EPROM
|
Siemens Semiconductor Group
SIEMENS AG
|
| TH58512FT |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
| TH58512FTI |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
| NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM
4194304-Bit (512K x 8) High Performance CMOS EPROM
4,194,304-Bit (512K x 8) High Performance CMOS EPROM
4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM
IC-4MB CMOS OTP PROM
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
|
